Raytheon's Integrated Defense Systems (IDS) business has been awarded a phase-two contract to develop a gallium nitride (GaN) solid-state source for use in non-lethal weapons.
The award was made by the Defense Department's Joint Non-Lethal Weapons Directorate (JNLWD).
Raytheon's GaN technology enables revolutionary performance and functionality for a wide range of DoD systems to include radar, electronic warfare and communications.
"Our support of the JNLWD is for very high frequency, millimeter-wave GaN to provide the warfighter with a lower-cost, lighter-weight, non-lethal engagement alternative," said Michael Del Checcolo, vice president of Engineering for Raytheon IDS.
Work on the contract will be conducted at IDS' semiconductor foundry located at the Integrated Air Defense Center, Andover, Mass.
IDS is a leader in compound semiconductor technology development, products and services for military and homeland security applications.
Foundry capabilities include design, development and manufacturing of gallium arsenide and GaN monolithic microwave integrated circuits and modules for advanced radar, electronic warfare, communications and weapon systems.
